2015

• High-Efficiency Fully CMOS VCO Rectifier for Microwatt Resonant Wireless Power Transfer, R.Ramzan , F.Zafar , Circuits and Systems II: Express Briefs, IEEE Transactions on , vol.62, no.2, pp.134,138, Feb. 2015
  


• A sub-10mW, Noise Cancelling, Wideband LNA for UWB Applications", AEU - International Journal of Electronics and Communications, R.Ramzan ,Q.Wahab , M.Khurram ,S.Arshad , Volume 69, Issue 1, January 2015, Pages 109–118
  

2014

• Highly Linear Inductively Degenerated 0.13ìm CMOS LNA using FDC Technique", IEEE Asia Pacific Conference on Circuits and Systems, F.Zafar , S.Arshad , R.Ramzan , Q.Wahab , Japan, 17-20 Nov., 2014
  


• Fully integrated Current Mode Class-D (CMCD) power amplifier with improved PAE, F.Zafar , A.R Qureshi , H.R Khan , Q. Wahab , 12th IEEE International NEWCAS Conference June 22- 25, 2014, Trois-Rivieres, Canada.
  


• Analysis and Modeling of Cost Effective Novel Structure of a Transmission Line for RFIC Designs, A.R Qureshi , H.R Khan , Q. Wahab , IEEE International Conference on Microwave Magnetics 2014, 29th June-2nd July, Sendai, Japan.
  


• PWM with differential Class-E amplifier for efficiency enhancement at back-off power levels, A.R Qureshi , H.R Khan , Q. Wahab , IEEE 57th International Midwest Symposium on Circuit and Systems, Texas, USA, August 3-6, 2014. (Accepted).
  

2013

• Eliminating Tie-down Diodes in Process Technologies, F.Zafar , A.R Qureshi , H.R Khan , Q. Wahab , 16th International Multi-topic Conference (INMIC) 2013, Pakistan, December 2013, Pages.110-114, doi 10.1109/INMIC.2013.6731334.
  


• A Fully Integrated,Highly Linear, Wideband LNA in 0.13µm CMOS Technology H. Shumail, S. Arshad , Q. Wahab, 2013 IEEE Symposium on Wireless Technology & Applications, (ISWTA 2013), Malaysia, September 2013, ISBN:978-1-4799-0155-5, doi 10.1109/ISWTA.2013.6688799, Pages.338-342.
  


• Wideband and Multiband CMOS LNAs:State-of-the-Art and Future Prospects, S. Arshad , F. Zafar, R. Ramzan & Q. Wahab, Elsevier Microelectronics Journal, Volume 44, Issue 9, September 2013, Pages 774–786.
  


• A Fully Integrated Distributed Active Transformer Based Power Amplifier in 0.13µm CMOS Technology, H.R. Khan, U. Sajid, S. Kanwal, F. Zafar & Q. Wahab, 2nd IEEE Saudi International Electronics, Communications and Photonics Conference, 27-30 April 2013, ISBN 978-1-4673-6196-5, doi 10.1109/SIECPC.2013.6550995, Pages 1-6.
  


• A Parallel Circuit Differential Class-E Power Amplifier Using Series Capacitance, H.R. Khan, J. Fritzin, A. Alvandpour & Q. Wahab, Journal of Analog Integrated Circuits and Signal Processing (Springer), April 2013, Volume 75, Issue 1, Pages 31-40.
  

2012

• Design of a 4-6GHz Wideband LNA in 0.13µm CMOS Technology, S. Arshad , F. Zafar & Q. Wahab ,2012 IEEE International Conference on Electronics Design, Systems and Applications(ICEDSA 2012),Malaysia,November 5-6, 2012, ISBN 978-1-4673-2162-4, doi 10.1109/ICEDSA.2012.6507780, Pages 125-129.
  


• Interface states density of Au/n-ZnO nanorods Schottky diodes, S. M. Faraz, O. Nur, M. Willander and Q. Wahab, IOP Conference Series: Materials Science and Engineering,Volume 34, Page 012006, Issue 1 (2012), doi 10.1088/1757-899X/34/1/012006.
  


• Study of deep level defects in doped and semi-insulating n-6H-SiC epilayers grown by sublimation method, M. Asghar, F. Iqbal, S.M. Faraz, V. Jokubavicius, Q. Wahab, M. Syvajarvi, Physica B: Condensed Matter, Volume 407, Issue 15, 1 August 2012, Pages 3038–3040.
  


• Characterization of deep level defects in sublimation grown p-type 6H-SiC epilayers by deep level transient spectroscopy, M. Asghar, F. Iqbal ,S. M. Faraz, V. Jokubavicius, Q. Wahab and M. Syvajarvi, Physica B: Condensed Matter, Volume 407, Issue 15, 1 August 2012, Pages 3041–3043.
  


• Figure of Merit for Narrowband,Wideband and Multiband LNAs, R. Ramzan, F.Zafar ,S. Arshad , and Q. Wahab , International Journal of Electronics, Volume 99, Issue 11, Pages 1603-1610, June 2012.
  


• Design & EM Simulation of On-chip Transformer Baluns for RF Power Amplifiers, H. R. Khan, F.Zafar ,A. R. Qureshi, and Q. Wahab , 2012 Asia-Pacific Electromagnetic Compatibility Symposium and Technical Exhibition, Singapore, May 21-24, ISBN 978-1-4577-1557-0, doi 10.1109/APEMC.2012.6237898, Pages 881-884, 2012.
  


• Sonnet EM Simulation of High Power Transformers for RF Power Amplifiers, H. R. Khan, F.Zafar ,A. R. Qureshi, and Q. Wahab , 28th International Review of Progress in Applied Computational Electromagnetics, Columbus, OH, USA, April 2012 , APEMC 2012 - Proceedings, Pages 881-884. doi 10.1109/APEMC.2012.6237898.
  


• High Efficiency Switching Classes RF Power Amplifiers in Wireless Communication, A. R. Qureshi, H. R. Khan and Q. Wahab , NED University Journal of Research, Volume : Thematic Issue on Energy, Pages 81-90, January 2012.
  

2011

• Electrical Characterization of Interface States in Ni/ZnO Schottky Diodes, S. M. Faraz, V. Khranovskyy, R. Yakimova, A. Ulyashin and Q. Wahab, MRS-2011 fall meeting, November 28- December 2, 2011, Boston, Massachusetts, USA
  


• Design of a 19-22GHz Wideband LNA in 0.13µm CMOS Technology Using Transmission Lines, F. Zafar, S. Arshad and Q. Wahab, 14th IEEE International Multitopic Conference (INMIC 2011), Karachi, Pakistan, 22-24 December 2011 ,ISBN 978-1-4577-0654-7,doi 10.1109/INMIC.2011.6151494, Pages 312-315.
  


• Current Transport Studies and Extraction of Series Resistance of Pd/ZnO Schottky Diode,S.M.Faraz, M. Willander and Q. Wahab,14th IEEE International Multitopic Conference (INMIC 2011), Karachi, Pakistan, December 22-24, 2011,ISBN 978-1-4577-0654-7,doi 10.1109/INMIC.2011.6151472, Pages 196-200.
  


• Temperature dependent current transport in Schottky diodes of nano structured ZnO grown on Si by magnetron sputtering, S. M. Faraz, V. Khranovskyy, R. Yakimova, A. Ulyashin and Q. Wahab, accepted , 2011 IEEE Regional Symposium of Micro & Nano Electronics, 28-30 september, 2011, Kota Kinabalu, Malaysia, ISBN 978-1-61284-844-0, doi 10.1109/RSM.2011.6088289, Pages 48-51.
  


• Annealing effects on electrical and optical properties of n-ZnO/p-Si heterojunction diodes,S. M. Faraz, N. H. Alvi, A. Henry, O. Nur, M. Willander and Q. Wahab, Mediterranean Conference on Innovative Materials and Applications (CIMA), Advanced Materials Research , doi 10.4028/www.scientific.net/AMR.324.233, Volume 324 (2011) , Switzerland, Pages 233-236.
  


• A Fully Integrated Class-E Power Amplifier in 0.13µm CMOS Technology, H. R. Khan, A. R. Qureshi and Q. Wahab , 9th IEEE International NEWCAS Conference, Bordeaux, France, 26-29 June 2011,ISBN 978-1-61284-135-9, doi 10.1109/NEWCAS.2011.5981257, Pages.410-413
  


• Post fabrication annealing effects on electrical and optical properties of n-ZnO nanorods/p-Si heterojunction diodes, S. M. Faraz, N. H. Alvi, A.Henry, O. Nur, M.Willander and Q. Wahab, Techconnect World 2011, Nanotech Conference, 13-16 June 2011, Boston, Massachusetts, USA, Volumn 2, ISBN 978-1-4398-7139-3.
  


• A 24 GHz Class-A Power Amplifier in 0.13µm CMOS Technology, H. R. Khan and Q. Wahab , 3rd International Conference on Computer Research and Development (ICCRD), Shanghai, March 2011, Volume 3,ISBN 978-1-61284-839-6, doi 10.1109/ICCRD.2011.5764203, Pages 314-317.
  

2010

• Depth-resolved cathodoluminescence study of zinc oxide nanorods catalytically grown on p-type 4H-SiC, N. Bano, I. Hussain, O. Nour, M. Willander, Q. Wahab, A. Henry, H. S. Kwack and D. Le. Si Dang, Journal of Luminescence, 2010, Volume 130, issue 6, Pages 963-968.
  


• Influence of background concentration induced field on the emission rate signatures of an electron trap in zinc oxide Schottky devices, H. Noor, P. Klason, S. M. Faraz, O. Nour, Q. Wahab, M. Willander and M. Asghar, J. Appl. Phys. 2010, Volume 107, Page 103717
  


• Comparison of Two GaN Transistor Technologies in Broadband Power Amplifiers, S. Azam, C. Svensson, Q. Wahab and R. Jonsson, Microwave Journal, 2010, Volume 53, issue 4, Pages 184-192.
  


• A TCAD approach for non-linear evaluation of microwave power transistor and its experimental verification by LDMOS, A. Kashif, C.Svensson, K. Hayat, S. Azam, N. Akhter, M. Imran and Q. Wahab, Journal of Computational Electronics, 2010, Volume 9, issue 2, Pages 79-86.
  


• Study of electric field enhanced emission rates of an electron trap in n-type GaN grown by hydride vapor phase epitaxy, H. Ashraf, M. Imran Arshad, S. M. Faraz, Q. Wahab, P. R. Hageman and M. Asghar, J. Appl. Phys.2010, Volume 108, Page 103708.
  


• Interface state density of free-standing GaN Schottky diodes, S. M. Faraz, H. Ashraf, M. Imran Arshad, P. R. Hageman, M. Asghar and Q. Wahab , Semicond. Sci. Technol.2010, doi:10.1088/0268-1242/25/9/095008, Volume 25, Page 095008.
  


• A 900MHz 26.8 dBm Differential Class-E CMOS Power Amplifier, H. R. Khan, J. Fritzin, Q. Wahab, A. Alvandpour, 5th German Microwave Conference (GEMMIC) 2010, Berlin, Germany, 15-17 March 2010, ISBN 978-1-4244-4933-0, Pages 276-279.
  


• Design of a Highly Linear 900MHz Single Ended LNA in 0.35µm CMOS Technology, F. Zafar, H. Abid, J. Ahmed, H. R. Khan, R. Ramzan and Q. Wahab, IEEE Conference on SusTainable Utilization and Development in Engineering and Technology (STUDENT 2010), Malaysia., 20-21 November 2010, ISBN 978-1-4244-7504-9, doi 10.1109/STUDENT.2010.5686993, Pages 127-130.
  


• High Power, Single Stage SiGaN HEMT Class E Power Amplifier at GHz Frequencies, S. Azam, R. Jonsson, J. Fritzin, A. Alvandpour and Q. Wahab, IEEE International Bhurban Conference on Applied Sciences and Technology, 2010.
  

2009

• Reduction in on-resistance of LDMOS transistor for improved RF performance, A. Kashif, C. Svensson and Q. Wahab, Microelectronics Technology and Devices - SBMicro 2009, doi 10.1149/1.3183746, Volume 23, issue 1, Pages 413-420.
  


• Designing and Fabrication of power amplifiers using ADS and active device study in TCAD, S. Azam, H. R. Khan and Q. Wahab , 12th International Symposium on Microwave and Optical Technology (ISMOT-2009) New Delhi, India, December 2009.
  


• Modeling and simulations of Pd/n-ZnO Schottky diode and its comparison with measurements, S. Faraz, Hadia Noor, M.Asghar, M. Willander, Q. Wahab , Advanced Materials Research , doi 10.4028/www.scientific.net/AMR.79-82.1317, Volume 79-82, Pages 1317-1320, August, 2009.
  

2008

• Influence of interface state charges on RF performance of LDMOS transistor, A. Kashif, T. Johansson, C. Svensson, S. Azam, T. Arnborg and Q. Wahab , Solid-State Electronics, July 2008, Volume 52, Issue 7, Pages 1099–1105.
  


• Designing, Fabrication and Characterization of Power Amplifiers Based on 10-Watt SiC MESFET & GaN HEMT at Microwave Frequencies, S. Azam, R. Jonsson and Q. Wahab, IEEE European Microwave Week, Amsterdam, The Netherlands,27-31 October 2008, ISBN 978-2-87487-006-4, doi 10.1109/EUMC.2008.4751484, Pages 444-447.
  


• Flexible power amplifier designing form device to circuit level by computational load-pull simulation technique, A. Kashif, S. Azam, C. Svensson and Q. Wahab, Microelectonics Technology and Devices - SBMicro 2008, Volume 14, issue 1, ISBN 978-1-56677-646-2, doi 10.1149/1.2956037, Pages 233-239.
  


• Further enhancement of Load pull simulation technique to study non linear effects of LDMOS in TCAD, A. Kashif, R. Jonsson and Q. Wahab, Giga Hertz Symposium, 2008.
  


• Performance of SiC Microwave Transistors in Power Amplifiers, S. Azam, R. Jonsson, E. Janzen and Q. Wahab, Proc. of MRS Symposium on wide bandgap semiconductor electronics, 2008. Vol 1069, Symposium-D