• "Study of deep level defects in doped and semi-insulating n-6H-SiC epilayers grown by sublimation method", Physica B: Condensed Matter, vol. 407, pp. 3038-3040, 2012
• "Interface states density of Au/n-ZnO nanorods Schottky diodes", IOP Conf. Ser.: Mater. Sci. Eng., vol. 34, pp. 012006 (2012)
• "Characterization of deep level defects in sublimation grown p-type 6H-SiC epilayers by deep level transient spectroscopy",Physica B: Condensed Matter, Vol. 407, no.15, pp. 3041, 2012
• "Study of deep level defects in n- and p-type 6H-SiC grown by sublimation epitaxy for fluorescent properties", 2011- International Conference on Silicon Carbide and Related Materials (ICSCRM 2011),Cleveland, Ohio, USA
• "Current Transport Studies and Extraction of Series Resistance of Pd/ZnO Schottky Diode",14th IEEE International Multitopic Conference (INMIC 2011),Karachi,Pakistan,December 2011,ISBN:978-1-4577-0654-7 doi 10.1109/INMIC.2011.6151472
• "Electrical Characterization of Interface States in Ni/ZnO Schottky Diodes", MRS-2011 Fall Meeting, November 28- December 2, 2011, Boston, Massachusetts, USA
• "Temperature dependent current transport in Schottky diodes of nano structured ZnO grown on Si by magnetron sputtering", 2011 IEEE Regional Symposium of Micro & Nano Electronics, 28-30 september, 2011, Kota Kinabalu, Malaysia, ISBN 978-1-61284-846-4
• "Annealing effects on electrical and optical properties of n-ZnO/p-Si heterojunction diodes", Advanced Materials Research vol. 324 (2011) pp 233-236.
• " Post fabrication annealing effects on electrical and optical characteristics of n-ZnO nanorods/p-Si heterojunction diodes", Techconnect World 2011, Nanotech Conference, June 13-16, 2011, Boston, Massachusetts, USA, ISBN 978-1-4398-7139-3
• "Interface state density of free-standing GaN Schottky diodes", Semicond. Sci. Technol. Vol. 25, pp. 095008, 2010  
• "Influence of background concentration induced field on the emission rate signatures of an electron trap in zinc oxide Schottky devices", J. Appl. Phys., vol.107, pp.103717, 2010
• "Study of electric field enhanced emission rates of an electron trap in n-type GaN grown by hydride vapor phase epitaxy", J. Appl. Phys., vol.108, pp.103708, 2010
• "Modeling and simulations of Pd/n-ZnO Schottky diode and its comparison with measurements", Advanced Materials Research Vols. 79-82, pp. 1317, 2009

•  Solid State Devices (Especially Photonic Devices)
•  Nanotechnology
  
•  Solar Cells
  

• Completed PhD degree (Semiconductor Devices) which deals with growth, fabrication, characterization, modelling and simulation of wide bandgap semiconductor (ZnO,GaN and SiC etc)  schottky diodes, heterojunction diodes and LEDs
• Supervising projects on the fabrication of dye sensitized solar cells(DSSC)

Projects Supervised:

• Supervised M. Engg Independent study project (ISP) of Ms Zarrin Tajwar, Title: "Modeling and Simulation of GaN Schottky diodes using TCAD and comparison to the experimental results", 2013
• Co-supervised an M.Engg. thesis on Electrical Characterization of Semiconductor Devices (2012)
• Supervised a final year project on efficiency study of Photovoltaic and their characteristics in local environment (2012)
• Supervised a final year project on Artificially Intelligent Perception Generation (2012)