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Book Chapters
  • GaN and SiC Based High Frequency Power Amplifiers, S.Azam & Q. Wahab, Micro and Nano-Electronics and Photonics, New Delhi; Daya Publishing House,2009, pp. 1-19.

  • High Temperature Electronic Materials,Q. Wahab, Springer Handbook of Electronic and Photonic materials, Springer, 2007, pp. 537-563.ISBN-10: 0-387-226059-5

  • The present and future trends in High Power Microwave and Millimeter Wave Technologies, S. Azam and Q. Wahab, Advanced Microwave and Milimeter Wave Technologies Semiconductor Devices Circuits and Systems, Moumita Mukherjee (Ed.), INTECH PUB, Vienna-Austria, pp.1-12. ISBN: 978-953-307-031-5

Books & Thesis

  • "CMOS LNA Design for GSM Applications: Low Noise Amplifier Designing in 0.35um CMOS Technology for 900MHz Applications" by F. Zafar, H. Abid and J. Ahmed., LAP LAMBERT Academic Publishing,Germany (September, 2011), ISBN-13: 978-3846509180

  • "Designing of Low Power, Wide Range ADPLL for Video Applications: All Digital Phase Locked Loop (ADPLL) Design in 65nm CMOS Technology," A.R. Qureshi & H. Qazi, LAP LAMBERTt Academic Publishing,Germany (November, 2011), ISBN: 978-3-8465-5473-9

Review Articles

  • New materials for micro-scale sensors and actuators, Q. Wahab, Materials Science and Engineering R, 56 (2007) P.1-129

  • Silicon carbide and diamond for high temperature device applications, M. Willande, M. Friesel, Q. Wahab and B. Straumal, Journal of Materials Science: Materials in Electronics, Volume 17, Number 1, (2006) ISSN: 0957-4522, DOI: 10.1007/s10854-005-5137-4

Invited Talks & Papers

  • RF output power analysis of SiC MESFET using large signal time domain simulations, Q. Wahab, R. Jonsson, S. Rudner and C. Svensson, 11th Workshop on Physics and Technology of Semiconductor Devices, Norsha Publishing House, New-Delhi, p.690 (2001).

  • Power Schottky rectifier and microwave transistors in 4H-SiC, Q. Wahab, S. Rudner and E. Janzen, Proceedings of the SPIE - The International Society for Optical Engineering, v 3975, pt.1-2, p 668-710 (2000)

  • Silicon carbide, a semiconductor for power devices, Q. Wahab and E. Janzen, Physics of Semiconductor Devices,Norsha Publishing House, New-Delhi, p.690 (1998)

  • Study of avalanche breakdown and impact ionization in 4H siliconcarbide, O. Konstantinov, Q. Wahab, N. Nordell and U. Lendefelt,IEEE, J. Elect. Mat., 27, 335 (1998).