Electrical Characterization of Semiconductor Devices

In this study we performed electrical characterization of 4H-SiC Schottky diodes. We measured their current-voltage (I-V) characteristics and calculated the ideality factor (n) and barrier height (FB). Capacitance-voltage (C-V) and Conductance-Voltage (G-V) characteristics were also performed at different frequencies. The Capacitance frequency (C-f), Conductance frequency (G-f) characteristics were also studied. Series resistance (Rs) and interface state densities were also extracted. This study will help to thoroughly understand the electrical behaviour of these devices and scope of their applications in the area of power electronics. Recent advances have allowed silicon (Si) semiconductor technology to approach its theoretical borders of this material plus power device requirements for many applications are at a point that the present Si-based power devices cannot handle. These requirements include higher blocking voltages, switching frequencies, efficiency, and reliability. Compound semiconductors have wide scope of applications to address these limitations in power devices. Wideband gap semiconductors like silicon carbide (SiC), gallium nitride (GaN), aluminium nitride (AlN), aluminium gallium nitride (AlGaN), and diamond proved to be very much promising due to their superior electrical and thermal properties.

Student Member

Asim Ahmed	(asahmed@neduet.edu.pk)