Doherty RF Power Amplifier
Doherty Power Amplifier (PA) will be implemented in 130 nm CMOS technology because of its inherent advantages over conventional PA. In conventional PA, there is a trade-off between linearity and efficiency. Doherty technique makes it possible
to attain linearity and efficiency at the same time. The Doherty technique consists of two amplifiers in parallel; in such a way that the combination enhances the power added efficiency of the main amplifier at 6dB back off from the maximum output power. Different classes of
amplifiers will be implemented in Doherty topology. Doherty power amplifier will be implemented in 130nm CMOS technology as it is one of the cheapest available technologies.
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